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dc.contributor.authorWu, Hung-Chien_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.date.accessioned2014-12-08T15:30:22Z-
dc.date.available2014-12-08T15:30:22Z-
dc.date.issued2013-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2244840en_US
dc.identifier.urihttp://hdl.handle.net/11536/21717-
dc.description.abstractIn this letter, the effect of CF4 plasma treatment on poly(3-hexylthiophene)-based organic thin-film transistors has been investigated. It was found that CF4 plasma treatment on the source/drain electrode can reduce contact resistance and increase mobility. The CF4 plasma treatment can increase the mobility from 0.0021 to 0.0102 cm(2)/V . s and decrease the contact resistance by about 70%. Moreover, the CF4 plasma treatment is compatible with the bottom-gate bottom-contact structure without degrading the SiO2 layer.en_US
dc.language.isoen_USen_US
dc.subjectOrganic thin-film transistors (OTFTs)en_US
dc.subjectplasma treatmenten_US
dc.subjectpoly(3-hexylthiophene) (P3HT)en_US
dc.titleImproving Electrical Properties of Bottom-Gate Poly(3-Hexylthiophene) Thin-Film Transistor Using CF4 Plasma Treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2244840en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue4en_US
dc.citation.spage538en_US
dc.citation.epage540en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000316813100021-
dc.citation.woscount1-
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