完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Da-Wei | en_US |
dc.contributor.author | Huang, Jhih-Kai | en_US |
dc.contributor.author | Lee, Chia-Yu | en_US |
dc.contributor.author | Chang, Ruey-Wen | en_US |
dc.contributor.author | Lan, Yu-Pin | en_US |
dc.contributor.author | Lin, Chien-Chung | en_US |
dc.contributor.author | Lee, Kang-Yuan | en_US |
dc.contributor.author | Lin, Chung-Hsiang | en_US |
dc.contributor.author | Lee, Po-Tsung | en_US |
dc.contributor.author | Chi, Gou-Chung | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:30:22Z | - |
dc.date.available | 2014-12-08T15:30:22Z | - |
dc.date.issued | 2013-04-01 | en_US |
dc.identifier.issn | 1551-319X | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JDT.2012.2230395 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21722 | - |
dc.description.abstract | In this study, we successfully transferred the patterns of a cone-shaped patterned sapphire substrate (CPSS) into SiO2 layer to fabricate a cone-shaped SiO2 patterned template by using nanoimprint lithography (NIL). The GaN-based light-emitting diodes (LEDs) were grown on this template by metal-organic chemical vapor deposition (MOCVD). The transmission electron microscopy (TEM) images suggest that the stacking faults formed near the cone-shaped SiO2 patterns during the epitaxial lateral overgrowth (ELOG) can effectively suppress the threading dislocations, which results in an enhancement of internal quantum efficiency. The Monte Carlo ray-tracing simulation reveals that the light extraction efficiency of the LED grown on cone-shaped SiO2 patterned template can be enhanced as compared with the LED grown on CPSS. As a result, the light output power of the LED grown on cone-shaped SiO2 patterned template outperformed the LED grown on CPSS. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Epitaxial lateral overgrowth (ELOG) | en_US |
dc.subject | internal quantum efficiency (IQE) | en_US |
dc.subject | light extraction efficiency (LEE) | en_US |
dc.subject | light-emitting diodes (LEDs) | en_US |
dc.subject | nano-imprint lithography (NIL) | en_US |
dc.title | Enhanced Light Output Power and Growth Mechanism of GaN-Based Light-Emitting Diodes Grown on Cone-Shaped SiO2 Patterned Template | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JDT.2012.2230395 | en_US |
dc.identifier.journal | JOURNAL OF DISPLAY TECHNOLOGY | en_US |
dc.citation.volume | 9 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 285 | en_US |
dc.citation.epage | 291 | en_US |
dc.contributor.department | 光電系統研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Institute of Photonic System | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000316802700006 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |