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dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorLin, Cheng-Ien_US
dc.contributor.authorLin, Zer-Mingen_US
dc.contributor.authorShie, Bo-Shiuanen_US
dc.contributor.authorHuang, Tiao-Yuanen_US
dc.date.accessioned2014-12-08T15:30:25Z-
dc.date.available2014-12-08T15:30:25Z-
dc.date.issued2013-03-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2013.2239647en_US
dc.identifier.urihttp://hdl.handle.net/11536/21750-
dc.description.abstractN-type junctionless (JL) planar poly-Si thin-film transistors (TFTs), which contain an in situ heavily phosphorous-doped channel with thickness ranging from 8 to 12 nm, were fabricated and characterized. The devices exhibit superior current drive and good control over performance variability. From C-V characterization, the ionized dopant concentration in the channel is determined to be around 2 x 10(19) cm(-3) and the fixed charge density to be around -6 x 10(12) cm(-2). The negative fixed charge density is probably related to the segregation of phosphorous species at the oxide/channel interface. We also observed a reverse short-channel effect from the relationship between the threshold voltage and the channel length. One mechanism considering enhanced phosphorous segregation is proposed to explain this finding.en_US
dc.language.isoen_USen_US
dc.subjectFixed chargesen_US
dc.subjectjunctionless (JL) transistorsen_US
dc.subjectpoly-Sien_US
dc.subjectshort-channel effecten_US
dc.subjectthin-film transistor (TFT)en_US
dc.titleCharacteristics of Planar Junctionless Poly-Si Thin-Film Transistors With Various Channel Thicknessen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2013.2239647en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume60en_US
dc.citation.issue3en_US
dc.citation.spage1142en_US
dc.citation.epage1148en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000316820000035-
dc.citation.woscount9-
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