標題: COMPARISON OF CHEMICAL-VAPOR-DEPOSITION OF TIN USING TETRAKIS-DIETHYLAMINO-TITANIUM AND TETRAKIS-DIMETHYLAMINO-TITANIUM
作者: SUN, SC
TSAI, MH
交大名義發表
奈米中心
National Chiao Tung University
Nano Facility Center
關鍵字: METALLIZATION;ORGANOMETALLIC VAPOR DEPOSITION;TITANIUM NITRIDE
公開日期: 15-Dec-1994
摘要: The attributes and limitations of chemically vapor-deposited titanium nitride films from the reaction of tetrakis-diethylamino-titanium with ammmonia and tetrakis-dimethylamino-titanium with ammonia are discussed. Deposited films were characterized by growth rate, resistivity, surface morphology and step coverage over contact structures. Films deposited without ammonia flow were unstable in the atmosphere and Auger analysis showed a higher relative carbon content. It was found that the deposition pressure had a stronger effect than did the deposition temperature on the bulk resistivity and surface roughness. A higher pressure has a tendency to reduce the resistivity. Films appear smooth at low deposition temperatures and low pressures. Films become rough at high deposition temperatures and high pressures. The deposition process and resulting TiN layers are successfully integrated in a chemcially vapor-deposited W plus fill application.
URI: http://hdl.handle.net/11536/2177
ISSN: 0040-6090
期刊: THIN SOLID FILMS
Volume: 253
Issue: 1-2
起始頁: 440
結束頁: 444
Appears in Collections:Articles