标题: | Photoluminescence Characteristics of In2O3 Quantum Dot (QD)-SiO2 Nanocomposite Thin Films Containing Various QD Sizes |
作者: | Lyu, Yang-Ru Hsieh, Tsung-Eong 材料科学与工程学系 Department of Materials Science and Engineering |
公开日期: | 2012 |
摘要: | Nanocomposite layers containing In2O3 quantum dots (QDs) with radii ranging from 1.8 to 5 nm embedded in SiO2 matrix were prepared. Prominent blueshift with a drastic increase in emission efficiency for red, green and blue emissions were observed in the photoluminescence (PL) spectra of samples when QD radius was less than 1.32 nm. PL enhancement was further confirmed by the calibration of defect trap levels and indicated the Bohr radius of In2O3 QDs was 1.32 nm. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.007202ssl] All rights reserved. |
URI: | http://hdl.handle.net/11536/21801 http://dx.doi.org/10.1149/2.007202ssl |
ISSN: | 2162-8742 |
DOI: | 10.1149/2.007202ssl |
期刊: | ECS SOLID STATE LETTERS |
Volume: | 1 |
Issue: | 2 |
起始页: | R9 |
结束页: | R12 |
显示于类别: | Articles |
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