The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)

標題:	The Effect of Silicon Oxide Based RRAM with Tin Doping (vol 15, pg H65, 2012)
作者:	Chang, Kuan-Chang Tsai, Tsung-Ming Chang, Ting-Chang Syu, Yong-En Liao, Kuo-Hsiao Chuang, Siang-Lan Li, Cheng-Hua Gan, Der-Shin Sze, Simon M. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2012
URI:	http://hdl.handle.net/11536/21802 http://dx.doi.org/10.1149/2.022202ssl
ISSN:	2162-8742
DOI:	10.1149/2.022202ssl
期刊:	ECS SOLID STATE LETTERS
Volume:	1
Issue:	2
起始頁:	X1
結束頁:	X1
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.