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dc.contributor.authorHsu, Hsiao-Hsuanen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorCheng, Chun-Huen_US
dc.date.accessioned2014-12-08T15:30:35Z-
dc.date.available2014-12-08T15:30:35Z-
dc.date.issued2013-06-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2258455en_US
dc.identifier.urihttp://hdl.handle.net/11536/21854-
dc.description.abstractThis letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-kappa SiO2/TiO2/SiO2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm(2)/Vs, and good I-ON/I-OFF ratio of 6.7 x 10(5), which have the potential for the application of high-resolution flexible display.en_US
dc.language.isoen_USen_US
dc.subjectHigh-kappaen_US
dc.subjectindium-gallium-zinc oxide (IGZO)en_US
dc.subjectthin-film transistor (TFT)en_US
dc.subjectTiO2en_US
dc.titleA Flexible IGZO Thin-Film Transistor With Stacked TiO2-Based Dielectrics Fabricated at Room Temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2258455en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue6en_US
dc.citation.spage768en_US
dc.citation.epage770en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000319460800017-
dc.citation.woscount14-
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