A Flexible IGZO Thin-Film Transistor With Stacked TiO2-Based Dielectrics Fabricated at Room Temperature

doi:10.1109/LED.2013.2258455

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, Hsiao-Hsuan	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.contributor.author	Cheng, Chun-Hu	en_US
dc.date.accessioned	2014-12-08T15:30:35Z	-
dc.date.available	2014-12-08T15:30:35Z	-
dc.date.issued	2013-06-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2013.2258455	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21854	-
dc.description.abstract	This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-kappa SiO2/TiO2/SiO2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm(2)/Vs, and good I-ON/I-OFF ratio of 6.7 x 10(5), which have the potential for the application of high-resolution flexible display.	en_US
dc.language.iso	en_US	en_US
dc.subject	High-kappa	en_US
dc.subject	indium-gallium-zinc oxide (IGZO)	en_US
dc.subject	thin-film transistor (TFT)	en_US
dc.subject	TiO2	en_US
dc.title	A Flexible IGZO Thin-Film Transistor With Stacked TiO2-Based Dielectrics Fabricated at Room Temperature	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2013.2258455	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	6	en_US
dc.citation.spage	768	en_US
dc.citation.epage	770	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000319460800017	-
dc.citation.woscount	14	-
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