Room temperature epitaxial growth of (001) CeO2 on (001) LaAlO3 by pulsed laser deposition

Abstract

The room temperature epitaxial growth of CeO2 on lattice matched (001) LaAlO3 substrates by using pulsed laser deposition (PLD) method under various oxygen partial pressure (Po-2) is demonstrated. X-ray diffraction analysis with 2-Theta/rocking curve/Phi-scan, cross-sectional transmission electron microscopy with selected-area diffractions are used to characterize structural of grown films. The epitaxial (001) CeO2 can be achieved at room temperature under Po-2 less than 2 x 10(-3) Torr. The best quality of grown film is obtained under Po-2 = 2 x 10(-5) Torr and degraded under Po-2 = 2 x 10(-6) Torr due to oxygen deficiency in structure. The epitaxial relationship between CeO2 and LAO is confirmed to be (001)CeO2 //(001)LAO, [100](CeO2)//[110](LAO) and [010](CeO2)//[(1)over-bar10](LAO). No obvious reduction reaction occurred, from Ce+4 turned into Ce+3 states, as reducing oxygen partial pressure during growth by PLD.