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dc.contributor.authorHai Dang Trinhen_US
dc.contributor.authorLin, Yueh Chinen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorLee, Ching-Tingen_US
dc.contributor.authorWang, Shin-Yuanen_US
dc.contributor.authorHong Quan Nguyenen_US
dc.contributor.authorChiu, Yu Shengen_US
dc.contributor.authorQuang Ho Lucen_US
dc.contributor.authorChang, Hui-Chenen_US
dc.contributor.authorLin, Chun-Hsiungen_US
dc.contributor.authorJang, Simonen_US
dc.contributor.authorDiaz, Carlos H.en_US
dc.date.accessioned2014-12-08T15:30:40Z-
dc.date.available2014-12-08T15:30:40Z-
dc.date.issued2013-05-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2013.2254119en_US
dc.identifier.urihttp://hdl.handle.net/11536/21890-
dc.description.abstractThe characteristics of Al2O3/InSb MOSCAPs processed with different postdeposition annealing (PDA) temperatures are investigated. X-ray photoelectron spectroscopy analysis shows a significant reduction of InSb-oxides after HCl plus trimethyl aluminum treatment and oxide deposition. Multifrequency capacitance-voltage (C-V) characteristics exhibit low-frequency and asymmetrical C-V behaviors, in which capacitance in the InSb conduction band side is lower than in the valence band side. The electrical properties of the MOSCAPs are sensitive to PDA temperature and degraded significantly at PDA temperature > 300 degrees C. This degradation is closely related to the diffusion of In, Sb into Al2O3 as indicated by transmission electron microscopy analyses.en_US
dc.language.isoen_USen_US
dc.subjectAl2O3en_US
dc.subjectasymmetrical C-Ven_US
dc.subjectatomic layer deposition (ALD)en_US
dc.subjectInSben_US
dc.subjectMOSen_US
dc.subjectpost deposition annealing (PDA)en_US
dc.titleElectrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperaturesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2013.2254119en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume60en_US
dc.citation.issue5en_US
dc.citation.spage1555en_US
dc.citation.epage1560en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000319352900009-
dc.citation.woscount5-
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