標題: | Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs |
作者: | Hai-Dang Trinh Lin, Yue-Chin Chang, Edward Yi Hong-Quan Nguyen Wang, Shin-Yuan Wong, Yuen-Yee Binh-Tinh Tran Quang-Ho Luc Chi-Lang Nguyen Dee, Chang-Fu 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-一月-2012 |
摘要: | The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al2O3/InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the whole range of measured frequency (100 Hz-1 MHz) are observed, indicating very short minority carrier response time in InSb. The PDA temperature of 300 degrees C and above would result in the reduction of maximum capacitance. At the PDA temperature of above 300 degrees C the C-V hysteresis, frequency dispersion and stretch out increases significantly, indicating the degradation of the MOSCAP structures. The degradation might relate to the interdiffusion between Al2O3 and InSb during thermal steps. |
URI: | http://hdl.handle.net/11536/150575 |
期刊: | 2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE) |
起始頁: | 747 |
結束頁: | 749 |
顯示於類別: | 會議論文 |