標題: Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs
作者: Hai-Dang Trinh
Lin, Yue-Chin
Chang, Edward Yi
Hong-Quan Nguyen
Wang, Shin-Yuan
Wong, Yuen-Yee
Binh-Tinh Tran
Quang-Ho Luc
Chi-Lang Nguyen
Dee, Chang-Fu
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jan-2012
摘要: The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al2O3/InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the whole range of measured frequency (100 Hz-1 MHz) are observed, indicating very short minority carrier response time in InSb. The PDA temperature of 300 degrees C and above would result in the reduction of maximum capacitance. At the PDA temperature of above 300 degrees C the C-V hysteresis, frequency dispersion and stretch out increases significantly, indicating the degradation of the MOSCAP structures. The degradation might relate to the interdiffusion between Al2O3 and InSb during thermal steps.
URI: http://hdl.handle.net/11536/150575
期刊: 2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)
起始頁: 747
結束頁: 749
Appears in Collections:Conferences Paper