標題: High-Quality 1 eV In(0.3)Ga(0.7)As on GaAs Substrate by Metalorganic Chemical Vapor Deposition for Inverted Metamorphic Solar Cell Application
作者: Hong Quan Nguyen
Chang, Edward Yi
Yu, Hung Wei
Lin, Kung Liang
Chung, Chen Chen
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-七月-2011
摘要: In(0.3)Ga(0.7)As layers were grown by metalorganic chemical vapor deposition using step graded buffer layers on different misoriented GaAs(001) substrates. Smooth-surface In(0.3)Ga(0.7)As film with a root mean square roughness of 1.9 nm was obtained with the growth temperature of 490 degrees C using a 10-step graded parabolic-like indium profile buffer layer on the surface with the 6 degrees-off cut toward the [111] direction. The threading dislocation density in the film was determined to be 1.2 x 10(6) cm(-2) by transmission electron microscopy. The photoluminescence results obtained at 300 and 77K indicate that very low recombination centers existed in the epilayer. (C) 2011 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/APEX.4.075501
http://hdl.handle.net/11536/21892
ISSN: 1882-0778
DOI: 10.1143/APEX.4.075501
期刊: APPLIED PHYSICS EXPRESS
Volume: 4
Issue: 7
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