Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Kuan-Chang | en_US |
dc.contributor.author | Pan, Chih-Hung | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Tsai, Tsung-Ming | en_US |
dc.contributor.author | Zhang, Rui | en_US |
dc.contributor.author | Lou, Jen-Chung | en_US |
dc.contributor.author | Young, Tai-Fa | en_US |
dc.contributor.author | Chen, Jung-Hui | en_US |
dc.contributor.author | Shih, Chih-Cheng | en_US |
dc.contributor.author | Chu, Tian-Jian | en_US |
dc.contributor.author | Chen, Jian-Yu | en_US |
dc.contributor.author | Su, Yu-Ting | en_US |
dc.contributor.author | Jiang, Jhao-Ping | en_US |
dc.contributor.author | Chen, Kai-Huang | en_US |
dc.contributor.author | Huang, Hui-Chun | en_US |
dc.contributor.author | Syu, Yong-En | en_US |
dc.contributor.author | Gan, Der-Shin | en_US |
dc.contributor.author | Sze, Simon M. | en_US |
dc.date.accessioned | 2014-12-08T15:30:41Z | - |
dc.date.available | 2014-12-08T15:30:41Z | - |
dc.date.issued | 2013-05-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2251995 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21906 | - |
dc.description.abstract | In this letter, we introduced hydrogen ions into titanium metal doped into SiO2 thin film as the insulator of resistive random access memory (RRAM) by supercritical carbon dioxide (SCCO)(2) fluid treatment. After treatment, low resistance state split in to two states, we find the insert RRAM, which means it has an operating polarity opposite from normal RRAM. The difference of the insert RRAM is owing to the resistive switching dominated by hydrogen ions, dissociated from OH bond, which was not by oxygen ions as usual. The current conduction mechanism of insert RRAM was hopping conduction due to the metal titanium reduction reaction through SCCO2. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Hopping conduction | en_US |
dc.subject | resistive random access memory (RRAM) | en_US |
dc.subject | supercritical fluid | en_US |
dc.title | Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2013.2251995 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 34 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | 617 | en_US |
dc.citation.epage | 619 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000318433400015 | - |
dc.citation.woscount | 12 | - |
Appears in Collections: | Articles |
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