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dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorPan, Chih-Hungen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorZhang, Ruien_US
dc.contributor.authorLou, Jen-Chungen_US
dc.contributor.authorYoung, Tai-Faen_US
dc.contributor.authorChen, Jung-Huien_US
dc.contributor.authorShih, Chih-Chengen_US
dc.contributor.authorChu, Tian-Jianen_US
dc.contributor.authorChen, Jian-Yuen_US
dc.contributor.authorSu, Yu-Tingen_US
dc.contributor.authorJiang, Jhao-Pingen_US
dc.contributor.authorChen, Kai-Huangen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorGan, Der-Shinen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:30:41Z-
dc.date.available2014-12-08T15:30:41Z-
dc.date.issued2013-05-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2013.2251995en_US
dc.identifier.urihttp://hdl.handle.net/11536/21906-
dc.description.abstractIn this letter, we introduced hydrogen ions into titanium metal doped into SiO2 thin film as the insulator of resistive random access memory (RRAM) by supercritical carbon dioxide (SCCO)(2) fluid treatment. After treatment, low resistance state split in to two states, we find the insert RRAM, which means it has an operating polarity opposite from normal RRAM. The difference of the insert RRAM is owing to the resistive switching dominated by hydrogen ions, dissociated from OH bond, which was not by oxygen ions as usual. The current conduction mechanism of insert RRAM was hopping conduction due to the metal titanium reduction reaction through SCCO2.en_US
dc.language.isoen_USen_US
dc.subjectHopping conductionen_US
dc.subjectresistive random access memory (RRAM)en_US
dc.subjectsupercritical fluiden_US
dc.titleHopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2013.2251995en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue5en_US
dc.citation.spage617en_US
dc.citation.epage619en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000318433400015-
dc.citation.woscount12-
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