标题: | Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment |
作者: | Chang, Kuan-Chang Pan, Chih-Hung Chang, Ting-Chang Tsai, Tsung-Ming Zhang, Rui Lou, Jen-Chung Young, Tai-Fa Chen, Jung-Hui Shih, Chih-Cheng Chu, Tian-Jian Chen, Jian-Yu Su, Yu-Ting Jiang, Jhao-Ping Chen, Kai-Huang Huang, Hui-Chun Syu, Yong-En Gan, Der-Shin Sze, Simon M. 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Hopping conduction;resistive random access memory (RRAM);supercritical fluid |
公开日期: | 1-五月-2013 |
摘要: | In this letter, we introduced hydrogen ions into titanium metal doped into SiO2 thin film as the insulator of resistive random access memory (RRAM) by supercritical carbon dioxide (SCCO)(2) fluid treatment. After treatment, low resistance state split in to two states, we find the insert RRAM, which means it has an operating polarity opposite from normal RRAM. The difference of the insert RRAM is owing to the resistive switching dominated by hydrogen ions, dissociated from OH bond, which was not by oxygen ions as usual. The current conduction mechanism of insert RRAM was hopping conduction due to the metal titanium reduction reaction through SCCO2. |
URI: | http://dx.doi.org/10.1109/LED.2013.2251995 http://hdl.handle.net/11536/21906 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2251995 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 5 |
起始页: | 617 |
结束页: | 619 |
显示于类别: | Articles |
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