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dc.contributor.authorChen, I-Chenen_US
dc.contributor.authorCheng, Bo-Yuanen_US
dc.contributor.authorKe, Wen-Chengen_US
dc.contributor.authorKuo, Cheng-Huangen_US
dc.contributor.authorChang, Li-Chuanen_US
dc.date.accessioned2014-12-08T15:30:41Z-
dc.date.available2014-12-08T15:30:41Z-
dc.date.issued2013-05-01en_US
dc.identifier.issn0749-6036en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.spmi.2013.02.002en_US
dc.identifier.urihttp://hdl.handle.net/11536/21913-
dc.description.abstractWe investigated the effect of La additive on the improvement of light reflectance and thermal stability of Ag contacts on p-GaN. A high reflectance of over 90% at 460 nm wavelength and low specific contact resistivity of 5.5 x 10(-5) Omega cm(2) were obtained from La-containing Ag contacts annealed at 300 degrees C for 1 min, which also show better thermal stability than Ag contacts after annealing in air ambient. The experimental results reveal that the addition of La could effectively slow down Ag migration in < 1 1 1 > direction during annealing, and thus suppress the Ag agglomeration at elevated temperature, leading to a good ohmic contact with improved high reflectance and thermal stability. (C) 2013 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectOhmic contacten_US
dc.subjectLa additiveen_US
dc.subjectLight reflectanceen_US
dc.subjectSpecific contact resistivityen_US
dc.titleImproved light reflectance and thermal stability of Ag-based ohmic contacts on p-type GaN with La additiveen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.spmi.2013.02.002en_US
dc.identifier.journalSUPERLATTICES AND MICROSTRUCTURESen_US
dc.citation.volume57en_US
dc.citation.issueen_US
dc.citation.spage51en_US
dc.citation.epage57en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000318383100007-
dc.citation.woscount1-
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