標題: Simultaneous Activation and Crystallization by Low-Temperature Microwave Annealing for Improved Quality of Amorphous Silicon Thin-Film Transistors
作者: Lu, Yu-Lun
Lee, Yao-Jen
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
公開日期: 2012
摘要: In this study, activation and crystallization in short channel amorphous Si TFTs were demonstrated using a novel microwave annealing (MWA) technique. Both low-temperature MWA and rapid thermal annealing (RTA) were compared to study the dopant activation level. We successfully activated the source/drain region, improved the electronic mobility and suppressed the short-channel effects using low temperature MWA. This can reduce the annealing temperature and processing time below that of solid phase crystallization (SPC). This technique is promising for realizing a high utility rate of AM-LCDs with low cost. (C) 2012 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/21950
http://dx.doi.org/10.1149/2.003201ssl
ISSN: 2162-8742
DOI: 10.1149/2.003201ssl
期刊: ECS SOLID STATE LETTERS
Volume: 1
Issue: 1
起始頁: P1
結束頁: P3
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