標題: | Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties |
作者: | Chiu, Chung-Hua Huang, Chun-Wei Chen, Jui-Yuan Huang, Yu-Ting Hu, Jung-Chih Chen, Lien-Tai Hsin, Cheng-Lun Wu, Wen-Wei 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2013 |
摘要: | Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology. |
URI: | http://hdl.handle.net/11536/21954 http://dx.doi.org/10.1039/c3nr33302g |
ISSN: | 2040-3364 |
DOI: | 10.1039/c3nr33302g |
期刊: | NANOSCALE |
Volume: | 5 |
Issue: | 11 |
起始頁: | 5086 |
結束頁: | 5092 |
顯示於類別: | 期刊論文 |