標題: Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties
作者: Chiu, Chung-Hua
Huang, Chun-Wei
Chen, Jui-Yuan
Huang, Yu-Ting
Hu, Jung-Chih
Chen, Lien-Tai
Hsin, Cheng-Lun
Wu, Wen-Wei
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2013
摘要: Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.
URI: http://hdl.handle.net/11536/21954
http://dx.doi.org/10.1039/c3nr33302g
ISSN: 2040-3364
DOI: 10.1039/c3nr33302g
期刊: NANOSCALE
Volume: 5
Issue: 11
起始頁: 5086
結束頁: 5092
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