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dc.contributor.authorHuang, Yu-Chingen_US
dc.contributor.authorDai, Chia-Tsenen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:30:45Z-
dc.date.available2014-12-08T15:30:45Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-3037-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/21975-
dc.description.abstractFor high-voltage output driver, the lateral DMOS (LDMOS) is often used for both output function operation and self-protection against electrostatic discharge (ESD) events. In this work, a new structure of LDMOS output device with embedded SCR has been proposed and verified in a 0.25-mu m 60-V BCD process. This new structure, with additional p(+) and n(+) implantation regions added between the drain contact and poly-gate of LDMOS, can keep it stably in the high-current holding region after snapback. By using this structure, the LDMOS can provide high enough self-protected ESD robustness for applications in the high-voltage output drivers.en_US
dc.language.isoen_USen_US
dc.subjectElectrostatic discharges (ESD)en_US
dc.subjectlateral diffused MOS (LDMOS)en_US
dc.subjectsilicon-controlled rectifier (SCR)en_US
dc.titleSelf-Protected LDMOS Output Device with Embedded SCR to Improve ESD Robustness in 0.25-mu m 60-V BCD Processen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS 2013 (ISNE 2013)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000319457000036-
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