Multi-Bit-per-Cell a-IGZO TFT Resistive-Switching Memory for System-on-Plastic Applications

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Shih-Chieh	en_US
dc.contributor.author	Feng, Hsien-Tsung	en_US
dc.contributor.author	Yu, Ming-Jiue	en_US
dc.contributor.author	Wang, I-Ting	en_US
dc.contributor.author	Hou, Tuo-Hung	en_US
dc.date.accessioned	2014-12-08T15:30:46Z	-
dc.date.available	2014-12-08T15:30:46Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-1-4673-4870-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21986	-
dc.description.abstract	We reported a novel flexible nonvolatile memory using complete logic-compatible a-IGZO TFTs fabricated at room temperature. The memory device utilized localized and independent resistive switching for high-density two-bit-per-cell and multi-bit-per-cell operations. Combining low-temperature fabrication, low-cost integration, high bit-density, and excellent flexible memory characteristics, this device shows promise for future system-on-plastic applications.	en_US
dc.language.iso	en_US	en_US
dc.title	Multi-Bit-per-Cell a-IGZO TFT Resistive-Switching Memory for System-on-Plastic Applications	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000320615600026	-
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