A 2.4 GHz CMOS Power Amplifier Using Asymmetric MOSFETs

Abstract

In this paper, a two-stage 2.4 GHz power amplifier (PA) using the high-breakdown-voltage asymmetric NMOSFETs was implemented in a 0.18-mu m CMOS technology. In this process, the conventional NMOSFETs have a drain-to-source breakdown voltage (BVdss) about 3.5V, therefore restricting the available output power in PA designs. However, by using the special asymmetric NMOSFETs in the proposed PA, the circuit can safely operate at a supply voltage from 1.8 to 2.75V. Under a 2.75V operation, good power performances include a power gain of 20.4 dB, an output 1-dB compression point (P-out,P-1dB) of 21.5dBm and a power-added-efficiency (PAE) of 29.6%.