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dc.contributor.authorLo, Ming-Huaen_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorChen, Shih-Weien_US
dc.contributor.authorHong, Jhih-Cangen_US
dc.contributor.authorLu, Ting-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:01:21Z-
dc.date.available2014-12-08T15:01:21Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-60511-038-7en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/219-
dc.description.abstractWe report the successful growth of high quality ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AlN/GaN superlattices (SLs). From atomic force microscope measurement, the root-mean-square value of the surface morphology was only 0.35 nm, and no crack was found on the surface. The dislocation density was estimated to be as low as 2x10(8) cm(-2). X-ray and transmission electron microscope data show the grown MQW has shape interface with good periodicity. The sample has a deep UV photoluminescence emission at 334 nm (3.71 eV) with a very narrow linewidth of 45 meV at 13K. The cathodoluminescence image show fairly uniform luminescence pattern at room temperature. In conclusion, the AlGaN/GaN MQW grown by ALD technique should be useful for providing high crystalline quality AlGaN/GaN-based MQW for fabrication of AlGaN/GaN-based UV light emitting devices such as light emitting diodes and lasers.en_US
dc.language.isoen_USen_US
dc.titleAlGaN/GaN multiple quantum wells grown by using atomic layer deposition techniqueen_US
dc.typeProceedings Paperen_US
dc.identifier.journalADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATESen_US
dc.citation.volume1068en_US
dc.citation.spage101en_US
dc.citation.epage106en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000259991900015-
Appears in Collections:Conferences Paper