標題: Investigation of ICP Parameters for Smooth TSVs and Following Cu Plating Process in 3D Integration
作者: Chiang, Cheng-Hao
Hu, Yu-Chen
Chen, Kuo-Hua
Chiu, Chi-Tsung
Chuang, Ching-Te
Hwang, Wei
Chiou, Jin-Chern
Tong, Ho-Ming
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process.
URI: http://hdl.handle.net/11536/22016
ISBN: 978-1-4673-1638-5
ISSN: 2150-5934
期刊: 2012 7TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT)
顯示於類別:會議論文