標題: | Investigation of ICP Parameters for Smooth TSVs and Following Cu Plating Process in 3D Integration |
作者: | Chiang, Cheng-Hao Hu, Yu-Chen Chen, Kuo-Hua Chiu, Chi-Tsung Chuang, Ching-Te Hwang, Wei Chiou, Jin-Chern Tong, Ho-Ming Chen, Kuan-Neng 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2012 |
摘要: | Bosch reactive ion etching is widely used for TSV formation. The micro-masking formed during etching can be successfully removed by adjusting the internal parameters during etching. The smooth high-aspect-ratio TSVs were further developed in wafer-level fabrication. Finally, a two-step etching process was developed to achieve tapered TSVs for the following Cu plating process. |
URI: | http://hdl.handle.net/11536/22016 |
ISBN: | 978-1-4673-1638-5 |
ISSN: | 2150-5934 |
期刊: | 2012 7TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE (IMPACT) |
顯示於類別: | 會議論文 |