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dc.contributor.authorCHAN, SHen_US
dc.contributor.authorSZE, SMen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorLEE, WIen_US
dc.date.accessioned2014-12-08T15:03:40Z-
dc.date.available2014-12-08T15:03:40Z-
dc.date.issued1994-12-01en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/0169-4332(94)90200-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/2203-
dc.description.abstractThe present experiments demonstrate the epitaxial growth (EG) and selective epitaxial growth (SEG) of GaInP by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using ethyldimethylindium (EDMI), trimethylindium (TMI), trimethylgallium (TMG) and triethylgallium (TEG) as group III sources. In epitaxial growth of GaInP, the Ga incorporation efficiency using TEG+EDMI is found to be lower than those using other combinations. Completely selective epitaxy using TEGa + EDMIn can be achieved at a growth temperature of 675-degrees-C and at a growth pressure of 40 Torr, while other combinations (TEG + TMI, TMG + TMI, and TMG + EDMI) can achieve SEG of GaInP at 650-degrees-C. High resolution double-crystal X-ray measurements are used to investigate the compositional variation in the selectively epitaxial-grown area.en_US
dc.language.isoen_USen_US
dc.titleSELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCESen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/0169-4332(94)90200-3en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume82-3en_US
dc.citation.issueen_US
dc.citation.spage85en_US
dc.citation.epage90en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1994QA33600016-
Appears in Collections:Conferences Paper