Title: 以低壓有機金屬化學汽相磊晶法研究化合物半導體選擇性區域成長
Selective Epitaxial Growth of Compound Semiconductors Using Low- Pressure Metalorganic Chemical Vapor Deposition
Authors: 詹世雄
Shih-Hsiung Chan
施敏, 張俊彥
Simon Min Sze, Chun-Yen Chang
電子研究所
Keywords: 低壓有機金屬化學汽相沉積法,選擇性區域成長。;Low-Pressure Metalorganic Chemical Vapor Deposition
Issue Date: 1994
Abstract: 本論文中,我們利用低壓有機金屬化學汽相沉積法(Low-Pressure
Metalorganic Chemical Vapor Deposition),以研究化合物半導體的選
擇性區域磊晶成長。作為研究對象的化合物半導體,包括:砷化鎵(GaAs
)、磷化鎵(GaP)、磷化銦(InP)及磷化銦鎵(GaInP)。 並使用不同
的三族材料組合作為成長磷化銦鎵的起始材料(precursors),這些材料
組合包括:三甲基鎵+三甲基銦(TMG+TMI)、 三甲基鎵+二甲基一乙基銦
(TMG+EDMI)、三乙基鎵+三甲基銦(TEG+TMI)、 三乙基鎵+二甲基一乙
基銦(TEG+EDMI)。並且,以外加調變材料的方式,探討四氯化碳(CCl4
) 對選擇性的影響。為了解析區域成長範圍內的成份比例分佈,我們利高
解析雙單晶X射線繞射測量,並配合適當的成份分佈模型,可以合理地趨
近實際的成份分佈狀況。
We have done experimebtal studies on the epitaxial growth and
selective epitaxial growth ( SEG ) of GaInP by low-pressure
metalorganic chemical vapor deposition ( LP-MOCVD ) using
ethyldimethylindium ( EDMI ), trimethylindium ( TMI ),
trimethylgallium ( TMG ), and triethylgallium ( TEG ) as the
group III sources. The selective epitaxial growth of GaInP on
GaAs substrate patterned with silicon nitride is also done by
LP-MOCVD. The group III sources employed are the combinations
of TEG+EDMI, TEG+TMI, TMG+TMI and TMG+EDMI. A modified SEG
using tetrachloride ( CCl4 ) as the additional source has been
studied on the nucleation of GaAs, GaP, and InP on the SiNx
surface. The selectivity can be improved by the additional Cl-
containing reactants which is possessed of higher diffusion
coefficients. By the HRXRD simulation, a proposed model for the
composition variation in the SEG area is used to simulate the
experiemntal results of the composition distribution in the SEG
area. The model and simulation result can give s reasonable
description for the composition distribution which is caused by
the different diffusive characteristics of the precursor and
its thermal-decomposed fragments.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT830430013
http://hdl.handle.net/11536/59196
Appears in Collections:Thesis