標題: SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCES
作者: CHAN, SH
SZE, SM
CHANG, CY
LEE, WI
電子物理學系
Department of Electrophysics
公開日期: 1-Dec-1994
摘要: The present experiments demonstrate the epitaxial growth (EG) and selective epitaxial growth (SEG) of GaInP by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using ethyldimethylindium (EDMI), trimethylindium (TMI), trimethylgallium (TMG) and triethylgallium (TEG) as group III sources. In epitaxial growth of GaInP, the Ga incorporation efficiency using TEG+EDMI is found to be lower than those using other combinations. Completely selective epitaxy using TEGa + EDMIn can be achieved at a growth temperature of 675-degrees-C and at a growth pressure of 40 Torr, while other combinations (TEG + TMI, TMG + TMI, and TMG + EDMI) can achieve SEG of GaInP at 650-degrees-C. High resolution double-crystal X-ray measurements are used to investigate the compositional variation in the selectively epitaxial-grown area.
URI: http://dx.doi.org/10.1016/0169-4332(94)90200-3
http://hdl.handle.net/11536/2203
ISSN: 0169-4332
DOI: 10.1016/0169-4332(94)90200-3
期刊: APPLIED SURFACE SCIENCE
Volume: 82-3
Issue: 
起始頁: 85
結束頁: 90
Appears in Collections:Conferences Paper