完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHAN, SH | en_US |
dc.contributor.author | SZE, SM | en_US |
dc.contributor.author | CHANG, CY | en_US |
dc.contributor.author | LEE, WI | en_US |
dc.date.accessioned | 2014-12-08T15:03:40Z | - |
dc.date.available | 2014-12-08T15:03:40Z | - |
dc.date.issued | 1994-12-01 | en_US |
dc.identifier.issn | 0169-4332 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/0169-4332(94)90200-3 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2203 | - |
dc.description.abstract | The present experiments demonstrate the epitaxial growth (EG) and selective epitaxial growth (SEG) of GaInP by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using ethyldimethylindium (EDMI), trimethylindium (TMI), trimethylgallium (TMG) and triethylgallium (TEG) as group III sources. In epitaxial growth of GaInP, the Ga incorporation efficiency using TEG+EDMI is found to be lower than those using other combinations. Completely selective epitaxy using TEGa + EDMIn can be achieved at a growth temperature of 675-degrees-C and at a growth pressure of 40 Torr, while other combinations (TEG + TMI, TMG + TMI, and TMG + EDMI) can achieve SEG of GaInP at 650-degrees-C. High resolution double-crystal X-ray measurements are used to investigate the compositional variation in the selectively epitaxial-grown area. | en_US |
dc.language.iso | en_US | en_US |
dc.title | SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCES | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/0169-4332(94)90200-3 | en_US |
dc.identifier.journal | APPLIED SURFACE SCIENCE | en_US |
dc.citation.volume | 82-3 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 85 | en_US |
dc.citation.epage | 90 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:A1994QA33600016 | - |
顯示於類別: | 會議論文 |