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dc.contributor.authorChang, Wei-Lingen_US
dc.contributor.authorMeng, Chin-Chunen_US
dc.contributor.authorSyu, Jin-Siangen_US
dc.contributor.authorWang, Chia-Lingen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:30:53Z-
dc.date.available2014-12-08T15:30:53Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-2932-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/22049-
dc.description.abstractA low-power low-flicker-noise receiver is demonstrated using 0.18 mu m CMOS technology. Vertical-NPN bipolar junction transistors (BJTs) in standard CMOS process are used to substitute the mixer switching core and the input stage of subsequent IF VGA. Compared with the conventional CMOS mixer, the excellent flicker noise performance is obtained. As a result, the receiver achieves a 47 dB voltage gain at 2.4-GHz, and the noise figure is 9.6 dB at IF=100 kHz and 5.6 dB for IF>300 kHz. The total current consumption is 4.3 mA at 1.8 V supply voltage.en_US
dc.language.isoen_USen_US
dc.subjectlow poweren_US
dc.subjectlow flicker noiseen_US
dc.subjectdirect-conversion receiveren_US
dc.subjectdeep-n-well vertical-NPN bipolar junction transistoren_US
dc.subjectGilbert cell mixeren_US
dc.subjectpoly phase filteren_US
dc.title2.4-GHz 7.4-mW 300-kHz Flicker-Noise-Corner Direct Conversion Receiver Using 0.18 mu m CMOS and Deep-N-Well NPN BJTen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS)en_US
dc.citation.spage223en_US
dc.citation.epage225en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000320762900072-
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