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dc.contributor.authorLin, T. N.en_US
dc.contributor.authorHuang, L. T.en_US
dc.contributor.authorShu, G. W.en_US
dc.contributor.authorYuan, C. T.en_US
dc.contributor.authorShen, J. L.en_US
dc.contributor.authorLin, C. A. J.en_US
dc.contributor.authorChang, W. H.en_US
dc.contributor.authorChiu, C. H.en_US
dc.contributor.authorLin, D. W.en_US
dc.contributor.authorLin, C. C.en_US
dc.contributor.authorKuo, H. C.en_US
dc.date.accessioned2014-12-08T15:31:03Z-
dc.date.available2014-12-08T15:31:03Z-
dc.date.issued2013-08-01en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.38.002897en_US
dc.identifier.urihttp://hdl.handle.net/11536/22135-
dc.description.abstractWe report the distance-dependent energy transfer from an InGaN quantum well to graphene oxide (GO) by time-resolved photoluminescence (PL). A pronounced shortening of the PL decay time in the InGaN quantum well was observed when interacting with GO. The nature of the energy-transfer process has been analyzed, and we find the energy-transfer efficiency depends on the 1/d(2) separation distance, which is dominated by the layer-to-layer dipole coupling. (C) 2013 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleDistance dependence of energy transfer from InGaN quantum wells to graphene oxideen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.38.002897en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume38en_US
dc.citation.issue15en_US
dc.citation.spage2897en_US
dc.citation.epage2899en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000322576200078-
dc.citation.woscount4-
Appears in Collections:Articles


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