Distance dependence of energy transfer from InGaN quantum wells to graphene oxide

doi:10.1364/OL.38.002897

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, T. N.	en_US
dc.contributor.author	Huang, L. T.	en_US
dc.contributor.author	Shu, G. W.	en_US
dc.contributor.author	Yuan, C. T.	en_US
dc.contributor.author	Shen, J. L.	en_US
dc.contributor.author	Lin, C. A. J.	en_US
dc.contributor.author	Chang, W. H.	en_US
dc.contributor.author	Chiu, C. H.	en_US
dc.contributor.author	Lin, D. W.	en_US
dc.contributor.author	Lin, C. C.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.date.accessioned	2014-12-08T15:31:03Z	-
dc.date.available	2014-12-08T15:31:03Z	-
dc.date.issued	2013-08-01	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.38.002897	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22135	-
dc.description.abstract	We report the distance-dependent energy transfer from an InGaN quantum well to graphene oxide (GO) by time-resolved photoluminescence (PL). A pronounced shortening of the PL decay time in the InGaN quantum well was observed when interacting with GO. The nature of the energy-transfer process has been analyzed, and we find the energy-transfer efficiency depends on the 1/d(2) separation distance, which is dominated by the layer-to-layer dipole coupling. (C) 2013 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Distance dependence of energy transfer from InGaN quantum wells to graphene oxide	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.38.002897	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	38	en_US
dc.citation.issue	15	en_US
dc.citation.spage	2897	en_US
dc.citation.epage	2899	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000322576200078	-
dc.citation.woscount	4	-
顯示於類別：	期刊論文

文件中的檔案：

000322576200078.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。