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dc.contributor.authorTrinh, Hai-Dangen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorHong-Quan Nguyenen_US
dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorYu, Chih-Chiehen_US
dc.contributor.authorChen, Chi-Mingen_US
dc.contributor.authorChang, Chia-Yuanen_US
dc.contributor.authorWu, Jyun-Yien_US
dc.contributor.authorChiu, Han-Chinen_US
dc.contributor.authorYu, Terrenceen_US
dc.contributor.authorChang, Hui-Chengen_US
dc.contributor.authorTsai, Josephen_US
dc.contributor.authorHwang, Daviden_US
dc.date.accessioned2014-12-08T15:31:04Z-
dc.date.available2014-12-08T15:31:04Z-
dc.date.issued2013-08-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-013-2616-xen_US
dc.identifier.urihttp://hdl.handle.net/11536/22145-
dc.description.abstractThe electrical properties of Al2O3/n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage (C-V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-V hysteresis are observed. The reduction of C-V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy.en_US
dc.language.isoen_USen_US
dc.subjectALD Al2O3en_US
dc.subjectsurface treatmenten_US
dc.subjectInGaAsen_US
dc.subjectInAsen_US
dc.subjectMOSCAPsen_US
dc.titleInvestigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-013-2616-xen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume42en_US
dc.citation.issue8en_US
dc.citation.spage2439en_US
dc.citation.epage2444en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000322029800003-
dc.citation.woscount1-
Appears in Collections:Articles


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