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dc.contributor.authorYang, Chan-Shanen_US
dc.contributor.authorLin, Mao-Hsiangen_US
dc.contributor.authorChang, Chia-Huaen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorShen, Chang-Hongen_US
dc.contributor.authorWada, Osamuen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2014-12-08T15:31:06Z-
dc.date.available2014-12-08T15:31:06Z-
dc.date.issued2013-08-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2013.2270552en_US
dc.identifier.urihttp://hdl.handle.net/11536/22159-
dc.description.abstractA comparative study of indium-tin-oxide (ITO) nanowhiskers (NWhs) and thin films as transparent conductors in the terahertz frequency range are conducted. We employ both transmission-type and reflection-type terahertz time-domain spectroscopies (THz-TDTS and THz-TDRS) to explore the far-infrared optical properties of these samples. Their electrical properties, such as plasma frequencies and carrier scattering times, are analyzed and found to be fitted well by the Drude-Smith model over 0.1-1.4 THz. Further, structural and crystalline properties of samples are examined by scanning electron microscopy and X-ray diffraction, respectively. Non-Drude behavior of complex conductivities in ITO NWhs is attributed to carrier scattering from grain boundaries and impurity ions. In ITO thin films, however, the observed non-Drude behavior is ascribed to scattering by impurity ions only. Considering NWhs and thin films with the same height, mobility of the former is similar to 125 cm(2) V-1 s(-1), much larger than those of the ITO thin films, similar to 27 cm(2) V-1 s(-1). This is attributed to the longer carrier scattering time of the NWhs. The dc conductivities (similar to 250 Omega(-1) cm(-1)) or real conductivities in the THz frequency region of ITO NWhs is, however, lower than those of the ITO thin films (similar to 800 Omega(-1) cm(-1)) but adequate for use as electrodes. Partly, this is a reflection of the much higher plasma frequencies of thin films. Significantly, the transmittance of ITO NWhs (congruent to 60%-70%) is much higher (congruent to 13 times) than those of ITO thin films in the THz frequency range. The underneath basic physics is that the THz radiation can easily propagate through the air-space among NWhs. The superb transmittance and adequate electrical properties of ITO NWhs suggest their potential applications as transparent conducting electrodes in THz devices.en_US
dc.language.isoen_USen_US
dc.subjectComplex conductivityen_US
dc.subjectdielectric functionen_US
dc.subjectdrude-smith modelen_US
dc.subjecteffective medium theoryen_US
dc.subjectfar infrareden_US
dc.subjectindium tin oxideen_US
dc.subjectnanomaterialen_US
dc.subjectoptical constantsen_US
dc.subjectscattering timeen_US
dc.subjectspectroscopyen_US
dc.subjectterahertzen_US
dc.titleNon-Drude Behavior in Indium-Tin-Oxide Nanowhiskers and Thin Films Investigated by Transmission and Reflection THz Time-Domain Spectroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2013.2270552en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume49en_US
dc.citation.issue8en_US
dc.citation.spage677en_US
dc.citation.epage690en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000321625600001-
dc.citation.woscount2-
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