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dc.contributor.authorLo, Shun-Tsungen_US
dc.contributor.authorChen, Kuang Yaoen_US
dc.contributor.authorLin, Sheng-Dien_US
dc.contributor.authorWu, J-Y.en_US
dc.contributor.authorLin, T. L.en_US
dc.contributor.authorYeh, M. R.en_US
dc.contributor.authorChen, T. -M.en_US
dc.contributor.authorLiang, C. -T.en_US
dc.date.accessioned2014-12-08T15:31:09Z-
dc.date.available2014-12-08T15:31:09Z-
dc.date.issued2013-07-24en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/srep02274en_US
dc.identifier.urihttp://hdl.handle.net/11536/22180-
dc.description.abstractWe have studied a hybrid nanoelectronic system which consists of an AlGaAs/GaAs two-dimensional electron gas (2DEG) in close proximity (similar to 70 nm) to an Al superconducting nanofilm. By tuning the current through the Al film, we can change the conductance of the 2DEG and furthermore vary the effective disorder in the Al superconducting film in a controllable way. When a high current is injected into the film, screening which couples the Al film and the 2DEG results in a collapse of anti-symmetric behavior in the current-voltage characteristics, V(I) similar to - V(-I), which holds true in a conventional superconductor. Our results may open a new avenue of experimentally realizing a superconducting diode.en_US
dc.language.isoen_USen_US
dc.titleControllable Disorder in a Hybrid Nanoelectronic System: Realization of a Superconducting Diodeen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/srep02274en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume3en_US
dc.citation.issueen_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000322153800002-
dc.citation.woscount2-
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