完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, Jyun-Yu | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Lo, Wen-Hung | en_US |
dc.contributor.author | Chen, Ching-En | en_US |
dc.contributor.author | Ho, Szu-Han | en_US |
dc.contributor.author | Chen, Hua-Mao | en_US |
dc.contributor.author | Tai, Ya-Hsiang | en_US |
dc.contributor.author | Cheng, Osbert | en_US |
dc.contributor.author | Huang, Cheng-Tung | en_US |
dc.date.accessioned | 2014-12-08T15:31:11Z | - |
dc.date.available | 2014-12-08T15:31:11Z | - |
dc.date.issued | 2013-07-08 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4811784 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22203 | - |
dc.description.abstract | This work finds abnormal sub-threshold swing (S.S.) degradation under dynamic hot carrier stress (HCS) in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric. Results indicate that there is no change in S.S. after dynamic HCS due to band-to-band hot hole injection at the drain side which acts to diminish the stress field. Moreover, the impaired stress field causes the interface states to mainly distribute in shallow states. This results in ON state current and transconductance decreases, whereas S.S. degradation is insignificant after dynamic HCS. The proposed model is confirmed by one-side charge pumping measurement and gate-to-drain capacitance at varying frequencies. (C) 2013 AIP Publishing LLC. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4811784 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 103 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000321761000038 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |