完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, Chi-Chang | en_US |
dc.contributor.author | You, Hsin-Chiang | en_US |
dc.contributor.author | Ko, Fu-Hsiang | en_US |
dc.contributor.author | Yang, Wen-Luh | en_US |
dc.date.accessioned | 2014-12-08T15:31:13Z | - |
dc.date.available | 2014-12-08T15:31:13Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.isbn | 978-1-4244-3543-2 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22230 | - |
dc.description.abstract | A nanocrystal (NC) memory by sol-gel spin-coating method was demonstrated. The high-density and isolated NC was formed by depositing a mixed solution of nickel tetrachloride, zirconium tetrachloride, silicon tetrachloride, and germanium tetrachloride with a post-rapid thermal annealing process. The electrical properties in terms of memory window, charge retention, program/erase speed, and endurance were demonstrated. The memory window of the NC memory can be up to 2.8 V: the retention times were extrapolated up to 10(6) sec for about 5% and 10% charge loss at 25 and 85 degrees C measurement, respectively. The voltage shift after 10(4) program/erase cycles is less than 1V. The good electrical performance was attributed to the effects of the high-density isolated NCs. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Novel Sol-gel Derived SONOS-type Nanocrystal Memory | en_US |
dc.type | Article | en_US |
dc.identifier.journal | INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 | en_US |
dc.citation.spage | 1228 | en_US |
dc.citation.epage | 1229 | en_US |
dc.contributor.department | 材料科學與工程學系奈米科技碩博班 | zh_TW |
dc.contributor.department | Graduate Program of Nanotechnology , Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000282026500625 | - |
顯示於類別: | 會議論文 |