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dc.contributor.authorDo, Hienen_US
dc.contributor.authorYen, Tzu-Chunen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:31:14Z-
dc.date.available2014-12-08T15:31:14Z-
dc.date.issued2013-07-01en_US
dc.identifier.issn0734-2101en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.4811676en_US
dc.identifier.urihttp://hdl.handle.net/11536/22240-
dc.description.abstractEpitaxial titanium oxynitride (TiNO) films deposited on MgO by pulsed laser deposition were treated in hydrogen microwave plasma. Scanning electron microscopy and x-ray photoelectron spectroscopy were used to examine the stability and etching of TiNO which strongly depended on hydrogen gas pressure. TiNO was very chemically stable and remained with good crystallinity under hydrogen pressure below 5300 Pa. With increase of pressure, it may lead to the formation of etch pits in inverse pyramid shape. The etch mechanism as well as the effects of gas pressure and etching time are also presented. (C) 2013 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleStability and etching of titanium oxynitride films in hydrogen microwave plasmaen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.4811676en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Aen_US
dc.citation.volume31en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000321516400007-
dc.citation.woscount0-
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