Stability and etching of titanium oxynitride films in hydrogen microwave plasma

doi:10.1116/1.4811676

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DC 欄位	值	語言
dc.contributor.author	Do, Hien	en_US
dc.contributor.author	Yen, Tzu-Chun	en_US
dc.contributor.author	Chang, Li	en_US
dc.date.accessioned	2014-12-08T15:31:14Z	-
dc.date.available	2014-12-08T15:31:14Z	-
dc.date.issued	2013-07-01	en_US
dc.identifier.issn	0734-2101	en_US
dc.identifier.uri	http://dx.doi.org/10.1116/1.4811676	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22240	-
dc.description.abstract	Epitaxial titanium oxynitride (TiNO) films deposited on MgO by pulsed laser deposition were treated in hydrogen microwave plasma. Scanning electron microscopy and x-ray photoelectron spectroscopy were used to examine the stability and etching of TiNO which strongly depended on hydrogen gas pressure. TiNO was very chemically stable and remained with good crystallinity under hydrogen pressure below 5300 Pa. With increase of pressure, it may lead to the formation of etch pits in inverse pyramid shape. The etch mechanism as well as the effects of gas pressure and etching time are also presented. (C) 2013 American Vacuum Society.	en_US
dc.language.iso	en_US	en_US
dc.title	Stability and etching of titanium oxynitride films in hydrogen microwave plasma	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1116/1.4811676	en_US
dc.identifier.journal	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A	en_US
dc.citation.volume	31	en_US
dc.citation.issue	4	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000321516400007	-
dc.citation.woscount	0	-
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