INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCES

doi:10.1016/0022-0248(94)91178-9

標題:	INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCES
作者:	CHAN, SH CHANG, CY SZE, SM 交大名義發表電子工程學系及電子研究所 National Chiao Tung University Department of Electronics Engineering and Institute of Electronics
公開日期:	1-十二月-1994
URI:	http://dx.doi.org/10.1016/0022-0248(94)91178-9 http://hdl.handle.net/11536/2225
ISSN:	0022-0248
DOI:	10.1016/0022-0248(94)91178-9
期刊:	JOURNAL OF CRYSTAL GROWTH
Volume:	145
Issue:	1-4
起始頁:	978
結束頁:	980
顯示於類別：	期刊論文