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dc.contributor.authorChen, Chun-Nanen_US
dc.contributor.authorChang, Sheng-Hsiungen_US
dc.contributor.authorSu, Wei-Longen_US
dc.contributor.authorJen, Jen-Yien_US
dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2014-12-08T15:31:14Z-
dc.date.available2014-12-08T15:31:14Z-
dc.date.issued2013-07-01en_US
dc.identifier.issn0895-7177en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mcm.2012.11.010en_US
dc.identifier.urihttp://hdl.handle.net/11536/22251-
dc.description.abstractUsing the non-equilibrium Green's function and anti-bonding orbital model, a multiband treatment of quantum transport in an anisotropic semiconductor (Si-based) system is developed. In this study, we adopt Chiang's boundary treatment of the open boundary system into the non-equilibrium Green's function framework, and then an easy and powerful multiband treatment method is developed to solve the transmission coefficient of Si-based semiconductor quantum structures. (C) 2012 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBoundary treatmenten_US
dc.subjectMultibanden_US
dc.subjectNon-equilibrium Green's functionen_US
dc.subjectAnti-bonding orbital modelen_US
dc.subjectQuantum transporten_US
dc.subjectAnisotropic semiconductoren_US
dc.titleMultiband treatment of quantum transport in anisotropic semiconductors: Non-equilibrium Green's functionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mcm.2012.11.010en_US
dc.identifier.journalMATHEMATICAL AND COMPUTER MODELLINGen_US
dc.citation.volume58en_US
dc.citation.issue1-2en_US
dc.citation.spage282en_US
dc.citation.epage287en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000320601000029-
dc.citation.woscount0-
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