Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chiu, Shao-Pin | en_US |
dc.contributor.author | Lu, Jia Grace | en_US |
dc.contributor.author | Lin, Juhn-Jong | en_US |
dc.date.accessioned | 2014-12-08T15:31:22Z | - |
dc.date.available | 2014-12-08T15:31:22Z | - |
dc.date.issued | 2013-06-21 | en_US |
dc.identifier.issn | 0957-4484 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/24/24/245203 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22288 | - |
dc.description.abstract | We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out four-probe electrical-transport measurements on two individual NWs with geometric diameters of approximate to 70 and approximate to 90 nm in a wide temperature T interval of 1-70 K. The NWs reveal overall charge conduction behavior characteristic of disordered metals. In addition to the T dependence of resistance R, we have measured the magnetoresistance (MR) in magnetic fields applied either perpendicular or parallel to the NW axis. Our R(T) and MR data in different T intervals are consistent with the theoretical predictions of the one- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and the electron-electron interaction (EEI) effects. In particular, a few dimensionality crossovers in the two effects are observed. These crossover phenomena are consistent with the model of a 'core-shell-like structure' in individual IZO NWs, where an outer shell of thickness t (similar or equal to 15-17 nm) is responsible for the quantum-interference transport. In the WL effect, as the electron dephasing length L-phi gradually decreases with increasing T from the lowest measurement temperatures, a 1D-to-2D dimensionality crossover takes place around a characteristic temperature where L-phi approximately equals d, an effective NW diameter which is slightly smaller than the geometric diameter. As T further increases, a 2D-to-3D dimensionality crossover occurs around another characteristic temperature where L-phi approximately equals t (<d). In the EEI effect, a 2D-to-3D dimensionality crossover takes place when the thermal diffusion length L-T progressively decreases with increasing T and approaches t. However, a crossover to the 1D EEI effect is not seen because L-T < d even at T D 1 K in our IZO NWs. Furthermore, we explain the various inelastic electron scattering processes which govern L-phi. This work demonstrates the complex and rich nature of the charge conduction properties of group-III metal-doped ZnO NWs. This work also strongly indicates that the surface-related conduction processes are essential to doped semiconductor nanostructures. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Quantum-interference transport through surface layers of indium-doped ZnO nanowires | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0957-4484/24/24/245203 | en_US |
dc.identifier.journal | NANOTECHNOLOGY | en_US |
dc.citation.volume | 24 | en_US |
dc.citation.issue | 24 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000319384300004 | - |
dc.citation.woscount | 1 | - |
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