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dc.contributor.authorChen, Jasonen_US
dc.contributor.authorLu, Haidongen_US
dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorDunn, Steveen_US
dc.contributor.authorOstrikov, Kostya (Ken)en_US
dc.contributor.authorGruverman, Alexeien_US
dc.contributor.authorValanoor, Nagarajanen_US
dc.date.accessioned2014-12-08T15:31:32Z-
dc.date.available2014-12-08T15:31:32Z-
dc.date.issued2013-05-06en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4802885en_US
dc.identifier.urihttp://hdl.handle.net/11536/22365-
dc.description.abstractAsymmetrical electrical boundary conditions in (001)-oriented Pb(Zr0.2TiO0.8)O-3 (PZT) epitaxial ultrathin ferroelectric films are exploited to control surface photochemical reactivity determined by the sign of the surface polarization charge. It is shown that the preferential orientation of polarization in the as-grown PZT layer can be manipulated by choosing an appropriate type of bottom electrode material. PZT films deposited on the SrRuO3 electrodes exhibit preferential upward polarization (C+) whilst the same films grown on the (La, Sr)CoO3-electrodes are polarized downward (C-). Photochemical activity of the PZT surfaces with different surface polarization charges has been tested by studying deposition of silver nanoparticles from AgNO3 solution under UV irradiation. PZT surfaces with preferential C+ orientation possess a more active surface for metal reduction than their C- counterparts, evidenced by large differences in the concentration of deposited silver nanoparticles. This effect is attributed to band bending at the bottom interface which varies depending on the difference in work functions of PZT and electrode materials. (C) 2013 AIP Publishing LLC.en_US
dc.language.isoen_USen_US
dc.titleInterface control of surface photochemical reactivity in ultrathin epitaxial ferroelectric filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4802885en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume102en_US
dc.citation.issue18en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000320439900054-
dc.citation.woscount8-
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