Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Yao-Feng | en_US |
dc.contributor.author | Tsai, Yu-Ting | en_US |
dc.contributor.author | Chang, Geng-Wei | en_US |
dc.contributor.author | Syu, Yong-En | en_US |
dc.contributor.author | Tai, Ya-Hsiang | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.date.accessioned | 2014-12-08T15:31:36Z | - |
dc.date.available | 2014-12-08T15:31:36Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.issn | 2162-8769 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/22407 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/2.003205jss | en_US |
dc.description.abstract | Thermal annealing effect and high temperature electrical measurement were studied on a temperature-sensitive FeOx-transition layer of a TiN/SiO2/FeOx/Fe structure, including bipolar switching behaviors, statistics of set and reset electrical characteristics, endurance and retention. Increase of the thermal budget on the structure shrinks both the operation voltage and variation as well as improving the device operation stability and power dissipation. Cross-sectional image, crystallinity and chemical composition analyzes of the FeOx-transition layer were examined by transmission electron microscope, X-ray diffraction and X-ray photon-emission spectra depth profiles, respectively. In addition, for the temperature-sensitive FeOx-containing structure, the resistive switching behaviors and characteristics were also investigated at room temperature and 85 degrees C. These resistive switching behaviors indicate the possible resistive switching mechanism and electrical characteristics, providing a better understanding for the temperature-sensitive FeOx-based memristors. (C) 2012 The Electrochemical Society. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe Structure | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.003205jss | en_US |
dc.identifier.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 1 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | Q91 | en_US |
dc.citation.epage | Q95 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000319448000017 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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