標題: | Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices |
作者: | Huang, Chun-Yang Jieng, Jheng-Hong Jang, Wen-Yueh Lin, Chen-Hsi Tseng, Tseung-Yuen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2013 |
摘要: | A series of complex HfO2/Al2O3 layer by layer resistive random access memory(RRAM) structure grown by atomic layer deposition are investigated. The modulation of forming voltage can be achieved by controlling the number of Al2O3 layers in HfO2 devices. In addition, the crystallization temperature of HfO2 based RRAM devices can also be improved by insetting Al2O3 layers in HfO2 film. Compared with pure HfO2 device, a significant improvement in resistive switching properties such as forming voltage variation and the distribution of HRS/LRS during resistance switching is demonstrated in the HfO2/Al2O3 layer by layer devices. Moreover, good endurance characteristic and highly reliable multibit operation are also achieved in this device structure. (c) 2013 The Electrochemical Society. All rights reserved. |
URI: | http://hdl.handle.net/11536/22426 http://dx.doi.org/10.1149/2.006308ssl |
ISSN: | 2162-8742 |
DOI: | 10.1149/2.006308ssl |
期刊: | ECS SOLID STATE LETTERS |
Volume: | 2 |
Issue: | 8 |
起始頁: | P63 |
結束頁: | P65 |
顯示於類別: | 期刊論文 |