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dc.contributor.authorChantarat, N.en_US
dc.contributor.authorChen, Yu-Weien_US
dc.contributor.authorHsu, Shu-Hanen_US
dc.contributor.authorLin, Chin-Chingen_US
dc.contributor.authorChiang, Mei-Chingen_US
dc.contributor.authorChen, San-Yuanen_US
dc.date.accessioned2014-12-08T15:31:43Z-
dc.date.available2014-12-08T15:31:43Z-
dc.date.issued2013en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/11536/22434-
dc.identifier.urihttp://dx.doi.org/10.1149/2.005309jssen_US
dc.description.abstractWe reported the fabrication of an FTO conducting thin film via a spray deposition method, which was used to investigate the effect of oxygen content in the carrier gas on deposited film morphology and properties. Using a carrier gas containing various O-2/N-2 concentrations (0%, 20%, 50%, 80%, and 100%) led to significant changes in the thickness, size, and shape of grain growth. The deposited films with 0-50% oxygen content yielded a low resistivity of similar to 10(-4) Omega-cm and a transmittance in the range of 76-96% at 550 nm. Furthermore, by changing the carrier gas concentration, the FTO films displayed different charge transport, recombination, and collection properties due to the surface and interfacial effects. These films with modified properties can be applied to dye-sensitized solar cells (DSSCs). Overall, the conversion efficiency of a solar cell based on a 0% O-2 sample was increased by approximately 2% from that of a 100% O-2 sample. The higher efficiency is mainly the result of the lower O-2 content, which minimized the grain boundaries (spacing) and improved the electron transport on the FTO film surface. (C) 2013 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleEffect of Oxygen on the Microstructural Growth and Physical Properties of Transparent Conducting Fluorine-Doped Tin Oxide Thin Films Fabricated by the Spray Pyrolysis Methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.005309jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume2en_US
dc.citation.issue9en_US
dc.citation.spageQ131en_US
dc.citation.epageQ135en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000321620800018-
dc.citation.woscount2-
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