Evolution of Bottom c-Plane on Wet-Etched Patterned Sapphire Substrate

doi:10.1149/2.022309jss

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Chien-Chih	en_US
dc.contributor.author	Hsiao, Feng Ching	en_US
dc.contributor.author	Lin, Bo-Wen	en_US
dc.contributor.author	Hsu, Wen-Ching	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.date.accessioned	2014-12-08T15:31:43Z	-
dc.date.available	2014-12-08T15:31:43Z	-
dc.date.issued	2013	en_US
dc.identifier.issn	2162-8769	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22435	-
dc.identifier.uri	http://dx.doi.org/10.1149/2.022309jss	en_US
dc.description.abstract	Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {4 (1) over bar(3) over bar 18} and the disappearance of bottom c-plane. (C) 2013 The Electrochemical Society.	en_US
dc.language.iso	en_US	en_US
dc.title	Evolution of Bottom c-Plane on Wet-Etched Patterned Sapphire Substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/2.022309jss	en_US
dc.identifier.journal	ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY	en_US
dc.citation.volume	2	en_US
dc.citation.issue	9	en_US
dc.citation.spage	R169	en_US
dc.citation.epage	R171	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000321620800026	-
dc.citation.woscount	0	-
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