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dc.contributor.authorChen, Chien-Chihen_US
dc.contributor.authorHsiao, Feng Chingen_US
dc.contributor.authorLin, Bo-Wenen_US
dc.contributor.authorHsu, Wen-Chingen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.date.accessioned2014-12-08T15:31:43Z-
dc.date.available2014-12-08T15:31:43Z-
dc.date.issued2013en_US
dc.identifier.issn2162-8769en_US
dc.identifier.urihttp://hdl.handle.net/11536/22435-
dc.identifier.urihttp://dx.doi.org/10.1149/2.022309jssen_US
dc.description.abstractWet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {4 (1) over bar(3) over bar 18} and the disappearance of bottom c-plane. (C) 2013 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleEvolution of Bottom c-Plane on Wet-Etched Patterned Sapphire Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.022309jssen_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.citation.volume2en_US
dc.citation.issue9en_US
dc.citation.spageR169en_US
dc.citation.epageR171en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000321620800026-
dc.citation.woscount0-
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