完整後設資料紀錄
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dc.contributor.authorChen, Yi-Chunen_US
dc.contributor.authorWang, Guang-Fuen_US
dc.contributor.authorTai, Hsiang-Huaen_US
dc.contributor.authorChen, Jhih-Weien_US
dc.contributor.authorHuang, Yen-Chinen_US
dc.contributor.authorYang, Jan-Chien_US
dc.contributor.authorChu, Ying-Haoen_US
dc.date.accessioned2014-12-08T15:31:44Z-
dc.date.available2014-12-08T15:31:44Z-
dc.date.issued2011-06-24en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/22/25/254030en_US
dc.identifier.urihttp://hdl.handle.net/11536/22453-
dc.description.abstractWe have presented a systematical study of the domain nucleation and growth behaviors in multiferroic BiFeO(3) (BFO) films. Both the ferroelectric and the ferroelastic switching dynamics were investigated. Several environmental parameters, including the polarization orientations, the monodomain-like matrix, and the ordered domain walls as local boundaries, were well controlled by thin-film strain engineering through changing the vicinal angles of the substrates. The tip-based domain dynamics was studied by subsequent piezoresponse force microscope (PFM) imaging of the domain evolution under external voltage pulses. For the nanodomains written in the monodomain-like environment, the domain wall performed the thermal activated motion. The as-grown 71 degrees domain walls can act as pinning centers for the ferroelectric domain growth driven by low fields; moreover, ferroelastic nucleation near a 71 degrees domain wall will cause the deformation of the domain wall. The ferroelastic domain growth possessed relatively small activation fields, and therefore usually performed non-activated motion. This study revealed the effects of local environments on the dynamics forming nanoscale domains, and opened a pathway for applications in novel non-volatile functional devices.en_US
dc.language.isoen_USen_US
dc.titleNon-volatile domain nucleation and growth in multiferroic BiFeO(3) filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/22/25/254030en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume22en_US
dc.citation.issue25en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
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