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dc.contributor.authorLin, Wei-Hsunen_US
dc.contributor.authorWang, Kai-Weien_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.date.accessioned2014-12-08T15:31:48Z-
dc.date.available2014-12-08T15:31:48Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2012.12.066en_US
dc.identifier.urihttp://hdl.handle.net/11536/22480-
dc.description.abstractThe room-temperature photoluminescence (PL) and electroluminescence (EL) exceeding 1.3 mu m are observed for InGaAs-capped GaSb quantum-ring (QR) structures. With increasing In composition, the emission wavelength would shift from 1.18 to 131 mu m. The InGaAs-capped GaSb QRs also exhibit a higher injection current and stronger EL intensity at the same applied voltage. With the observation of low-temperature PL spectra, the transition mechanisms of the standard and InGaAs-capped QRs are further investigated. (c) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNanostructuresen_US
dc.subjectAntimonidesen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectSemiconducting III-V materialsen_US
dc.titleLong-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperatureen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2012.12.066en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume378en_US
dc.citation.issueen_US
dc.citation.spage571en_US
dc.citation.epage575en_US
dc.contributor.department光電學院zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentCollege of Photonicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000323355900140-
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