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dc.contributor.authorTu, Tse-Yien_US
dc.contributor.authorChao, Paul C. -P.en_US
dc.contributor.authorMai, Yueh-Tengen_US
dc.date.accessioned2014-12-08T15:31:53Z-
dc.date.available2014-12-08T15:31:53Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0946-7076en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s00542-013-1807-yen_US
dc.identifier.urihttp://hdl.handle.net/11536/22523-
dc.description.abstractThis study is dedicated to design a readout circuit to extract the output signal of a capacitive-type MEMS microphone. A low-power preamplifier is forged for a capacitive-type microphone to meet the demands on cell phone applications. The design starts with modeling the electro-mechanical behavior of a biased capacitive-type microphone using combination of AV and DC voltages sources. This aims to enable co-simulation of the microphone and the readout circuit design. The output signal of a capacitance-to-voltage converter is normally small and may cause substantial noise in the output signals. Therefore, a preamplifier is designed and applied to amplify the signal to an acceptable level for the convenience of ensuing signal processing. The designed readout circuit consists of two main sub-circuits, responsible for functions in two different stages. One is a newly-designed self-bias circuit in the structure of a capacitance-to-voltage converter at the first stage, while another is a low-voltage low-power two-stage or rail-to-rail MOS operational amplifier at the second stage. The proposed circuit is implemented by using the technology of TSMC 0.35 A mu m Mixed-Signal MODE (2P4M, 3.3 V/5 V) POLYCIDE. The supply voltage is fixed at low voltage (3 V), the total power dissipation is merely 200 mu W. Experiments are finally conducted to validate the performance of the designed readout circuit from 20 to 20k Hz with appropriate add-on high- and low-pass filters.en_US
dc.language.isoen_USen_US
dc.titleA low-power self-biased rail-to-rail preamplifier as a readout circuit for a capacitor-type microphoneen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s00542-013-1807-yen_US
dc.identifier.journalMICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMSen_US
dc.citation.volume19en_US
dc.citation.issue9-10en_US
dc.citation.spage1329en_US
dc.citation.epage1343en_US
dc.contributor.department影像與生醫光電研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentInstitute of Imaging and Biomedical Photonicsen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000323667600009-
dc.citation.woscount0-
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