A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	YARN, KF	en_US
dc.contributor.author	WANG, YH	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:03:43Z	-
dc.date.available	2014-12-08T15:03:43Z	-
dc.date.issued	1994-11-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2252	-
dc.description.abstract	In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, V(S), and holding voltage, V(H), was also investigated.	en_US
dc.language.iso	en_US	en_US
dc.title	A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	37	en_US
dc.citation.issue	11	en_US
dc.citation.spage	1849	en_US
dc.citation.epage	1852	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1994PJ62700008	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文